SiGe-GaN Tx module using Chip Embedded Substrate in S-band
| Autor: | Eigo Kuwata, Kazutomi Mori, Masaomi Tsuru, Kazuhiro Maeda, Hidenori, Mitsuhiro Shimozawa, Kiyoshi Ishida, Ishibashi, Kengo Kawasaki, Tomohiro Yao, Hironobu Shibata |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Variable-gain amplifier
Materials science Form factor (electronics) business.industry 020208 electrical & electronic engineering Phase (waves) 020206 networking & telecommunications 02 engineering and technology Substrate (electronics) Inductor Chip 0202 electrical engineering electronic engineering information engineering Optoelectronics S band business Phase shift module |
| Zdroj: | 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). |
| DOI: | 10.1109/rfit49453.2020.9226211 |
| Popis: | This paper describes small size 3D structure SiGe-GaN Tx module using chip embedded substrate. In order to achieve small package size of the Tx module, the GaN device is embedded in the PCB substrate. As the SiGe device and chip inductors are mounted on the PCB substrate over the GaN device, the chip area can be reduced compared the conventional 2D structure. In addition, an area array form factor is adopted for SiGe, GaN, and Tx modules. The area of SiGe and GaN devices and Tx modules can be reduced without reducing the number of I/O ports. Utilizing the both advantages of SiGe and GaN devices, the proposed Tx module achieves a high output power over 1W and the function of phase and amplitude control. The package size of the Tx module is occupying 7⨯7mm2 including SiGe and GaN devices and two chip inductors. The Tx module achieves phase and amplitude error of less than 1.5 degrees-rms., and 0.3dB rms., and an output power of 32dBm, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|