Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
| Autor: | Victor Sizov, Michael Krieger, Markus Sickmoeller, Lars Groh, Takuma Yagi, Stephan Lutgen, Saad Murad, Heiko B. Weber, Sebastian Roensch |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Condensed matter physics Silicon Magnetoresistance business.industry Mechanical Engineering Transistor chemistry.chemical_element Heterojunction High-electron-mobility transistor Condensed Matter Physics Epitaxy law.invention Weak localization chemistry Mechanics of Materials law Optoelectronics General Materials Science Fermi gas business |
| Zdroj: | Materials Science Forum. :1180-1184 |
| ISSN: | 1662-9752 |
| Popis: | We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations. The results verify the high material quality of the investigated GaN on silicon. |
| Databáze: | OpenAIRE |
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