The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs
| Autor: | Y. T. Hou, Tzu-Juei Wang, K. C. Lin, P. F. Hsu, C. Y. Cheng, T. L. Lee, K. T. Huang, J. C. Liao, Mong-Song Liang, Yean-Kuen Fang |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Intrinsic semiconductor Condensed Matter Physics Electronic Optical and Magnetic Materials Tunnel effect Shallow trench isolation MOSFET Materials Chemistry Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Quantum tunnelling Extrinsic semiconductor Leakage (electronics) |
| Zdroj: | Solid-State Electronics. 53:892-896 |
| ISSN: | 0038-1101 |
| Popis: | The effects of shallow trench isolation (STI) induced mechanical strain on gate induced drain leakage (GIDL) current in Hf-based and SiON n-type metal oxide semiconductor field effect transistors (nMOSFETs) are investigated in detail. With T-CAD simulator, the compressive strain is found to increase with decreasing active area length. The STI-induced mechanical strain induces band narrowing and increases intrinsic carrier concentration, thus enhancing GIDL current via both trap-assisted tunneling and band-to-band tunneling. In addition, the HfO2 gated nMOSFET has higher strain sensitivity than that of the SiON gated device for the higher density of interface states induced by the mechanical strain. Finally, the symmetric layout shows a higher ability to suppress the STI-enhanced GIDL current with the same active area length. |
| Databáze: | OpenAIRE |
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