| Autor: |
A R Nazmus Sakib, Tejas S. Shetty, Dereje Agonafer, Zaeem Baig, Fahad Mirza |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm). |
| DOI: |
10.1109/itherm.2014.6892319 |
| Popis: |
Replacing Silicon Dioxide (SiO 2 ) with low-k and ultralow-k (ULK), as a dielectric, in the Back-End-Of-Line (BEoL) has allowed the trend of miniaturization and convergence to continue. Although using low-k and ULK greatly increases the device performance, being mechanically weak these dielectric materials pose a serious challenge from the reliability standpoint. Delamination along the metal-dielectric interfaces and crack propagation in the dielectric layers has been widely observed during cooling from higher temperatures and thermal excursions. Moreover, as scaling of components continues, higher density interconnects and pitch |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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