High current density cation-exchanged SnO2–CdSe/ZnSe and SnO2–CdSe/SnSe quantum-dot photoelectrochemical cells
| Autor: | Shoyebmohamad F. Shaikh, Rajaram S. Mane, Mohammad Rizwan Khan, Sambhaji S. Bhande, Sulaiman M. Alfadul, Pritamkumar V. Shinde, Mu. Naushad |
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| Rok vydání: | 2018 |
| Předmět: |
Chemistry
business.industry Band gap Chalcogenide Tin selenide chemistry.chemical_element 02 engineering and technology General Chemistry Photoelectrochemical cell 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Catalysis 0104 chemical sciences chemistry.chemical_compound Quantum dot Selenide Materials Chemistry Optoelectronics Zinc selenide 0210 nano-technology business Tin |
| Zdroj: | New Journal of Chemistry. 42:9028-9036 |
| ISSN: | 1369-9261 1144-0546 |
| DOI: | 10.1039/c8nj01409d |
| Popis: | Research on the combination of low and high-bandgap energy materials through an ion-mediated chemical transformation of the nanostructure of one material into another, especially metal chalcogenide quantum dot (QD) solar cells plays a very important role in the fast charge transformation process with high power conversion efficiencies (PCE) by reducing surface charge recombinations. Based on a coordination chemistry approach, the present study demonstrates the importance of cation-exchange process in developing bandgap engineering of tin oxide–cadmium selenide (SnO2–CdSe) with zinc selenide (ZnSe) and tin selenide (SnSe) to form SnO2–CdSe/ZnSe and SnO2–CdSe/SnSe electrodes, respectively. Experimental conditions are optimized from optical and photovoltaic performances. Our best performing cation-exchange interface-modified photoelectrochemical devices, i.e., SnO2–CdSe/ZnSe and SnO2–CdSe/SnSe have achieved improvements of 21% and 28%, respectively, in their PEC values, i.e., 3.78% and 4.41% with remarkable current densities of 19.82 and 28.40 mA cm−2 when compared with SnO2–CdSe (1.63% and 9.74 mA cm−2). This is due to (a) the fast transfer of photo-generated electrons from the CdSe QD sensitizer to SnO2 photoanode by engineering a synergistically favourable band gap and (b) mitigation of a reverse photogenerated electron flow in the presence of a high band gap buffer ZnSe/SnSe layer, which would otherwise cause excessive recombinations. A simple cation-exchange interface modification process can, in general, pave the way for improving the performance of QD-based solar cells. |
| Databáze: | OpenAIRE |
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