Bias‐voltage‐ and bias‐light‐dependent high photocurrent gains in amorphous silicon Schottky barriers

Autor:	F. A. Rubinelli, J. Y. Hou, S. J. Fonash
Rok vydání:	1993
Předmět:	Photocurrent Light intensity Materials science business.industry Schottky barrier Photoconductivity General Physics and Astronomy Optoelectronics Schottky diode Biasing Semiconductor device business Ohmic contact
Zdroj:	Journal of Applied Physics. 73:2548-2554
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.353089
Popis:	Experimental results of very large, long‐wavelength photocurrent gains in amorphous silicon‐based Schottky barrier structures are reported. It is shown that these occur for devices in the space‐charge current regime operated at forward bias voltages past the flatband condition. The analysis of microelectronic and photonic structures computer program is used to show that these high gains are due to hole trapping and the resulting modulation of the virtual cathode barrier potential at the ohmic contact. As demonstrated, these gains are bias voltage, bias light, monochromatic light intensity, material property, and device thickness dependent. This type of photocurrent gain is another photogating effect and is much different than the usual bulk photoconductive gain.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b237686020ce33961a9a7a1b9e7490cf https://doi.org/10.1063/1.353089 Zobrazit plný text záznamu