The carrier concentration dependence of weak-localisation parameters in bismuth-based systems
| Autor: | H White, D S McLachlan |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Condensed matter physics
Magnetoresistance Chemistry Doping chemistry.chemical_element Inelastic scattering Condensed Matter Physics Semimetal Bismuth Condensed Matter::Materials Science Electrical resistivity and conductivity Condensed Matter::Superconductivity Monolayer General Materials Science Nuclear Experiment Tin |
| Zdroj: | Journal of Physics: Condensed Matter. 2:3529-3538 |
| ISSN: | 1361-648X 0953-8984 |
| DOI: | 10.1088/0953-8984/2/15/009 |
| Popis: | The effect of varying the carrier concentration and type (electrons and holes, or holes only) on weak-antilocalisation parameters such as the inelastic scattering length is studied. Disordered bismuth-based films are used, and the carrier concentration and type are changed by doping with tin. Two methods of doping are utilised. In the first, the films are sputtered from alloyed bismuth-tin targets. The second method involved interleaving bismuth layers 4.0 nm thick with tin layers less than a monolayer thick. It is shown that the sign of the temperature coefficient of resistance results from the delicate interplay between the weak antilocalisation and associated electron-electron interaction channels. It is also shown that the inelastic scattering length is only weakly dependent on carrier concentration but strongly dependent on film thickness. |
| Databáze: | OpenAIRE |
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