Effects of annealing treatment on the high temperature performance of 4H-SiC metal-semiconductor-metal ultraviolet photodiodes
| Autor: | Yi-feng Lu, Zhi-zhan Chen, Hong He, Shao-xiong Liu |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) Schottky barrier Thermionic emission 02 engineering and technology medicine.disease_cause 01 natural sciences law.invention Metal law 0103 physical sciences medicine General Materials Science 010302 applied physics business.industry Mechanical Engineering Schottky diode 021001 nanoscience & nanotechnology Condensed Matter Physics Photodiode Mechanics of Materials visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business Ultraviolet Dark current |
| Zdroj: | Materials Science in Semiconductor Processing. 71:116-120 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2017.07.018 |
| Popis: | The high temperature performance plays a crucial role in the high-temperature harsh environment detection. In this paper, the electrical and optical characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodiodes (PDs) were investigated at high temperatures. The C-V measurement indicates that the 4H-SiC Schottky barrier diode is partially depleted at 40 V bias. Analysis of I-V data based on the thermionic emission theory demonstrates that the annealing treatment at 400 °C can effectively improve the homogeneity of Ni/4H-SiC Schottky barrier height. Experimental results confirm that the annealing treatment is beneficial not only to reduce the dark current and improve the photoresponse, but also to enhance the sensitivity for 4H-SiC MSM PDs. The sensitivity of 400 °C annealed MSM PDs (6.2 × 103) is five times larger than that of as-deposited MSM PDs (1.3 × 103) at 200 °C. |
| Databáze: | OpenAIRE |
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