| Autor: |
Ghazal A. Fahmy, Sameh A. Ibrahim, Theodora M. Rezk, Hani Ragai |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC). |
| DOI: |
10.1109/jac-ecc51597.2020.9355883 |
| Popis: |
This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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