Doped ZrO2 for future lead free piezoelectric devices
| Autor: | S. Starschich, Ulrich Böttger |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Microelectromechanical systems Materials science Piezoelectric coefficient business.industry Doping General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Piezoelectricity Ferroelectricity Hysteresis chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Energy harvesting Indium |
| Zdroj: | Journal of Applied Physics. 123:044101 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The ferroelectric and piezoelectric properties of doped ZrO2 prepared by chemical solution deposition (CSD) are investigated. Doping with different elements such as Mg, In, La, and Y leads to a stabilization of the constricted hysteresis. As shown in a previous work, for the constricted hysteresis of ZrO2, the piezoelectric response is significantly larger compared to ZrO2 with a normal hysteresis. The Mg doped ZrO2 shows a strong temperature and cycle stability. For the piezoelectric properties, a magnesium concentration of 7% shows the largest piezoelectric response with a piezoelectric coefficient of >10 pm/V, as well as the best cycle stability. Due to thicker films, which can be realized by the CSD technique, the shown doped ZrO2 films are a promising candidate for energy related applications such as piezoelectric energy harvesting as well as for microelectromechanical systems. |
| Databáze: | OpenAIRE |
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