Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In0.53Ga0.47As MOSFET and FinFET Applications

Autor:	C.C. Chang, S.H. Huynh, E.Y. Chang, K.S. Yang, P.C. Chang, M.T.H. Ha, H.B. Do, J.W. Lin, Q.H. Luc, Y.C. Lin, C.C.F. Chang
Rok vydání:	2016
Předmět:	In situ Materials science Passivation business.industry Interface (computing) MOSFET Remote plasma Optoelectronics business
Zdroj:	Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2016.n-1-05
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b220ac58861303765e3d55b3584f92dd https://doi.org/10.7567/ssdm.2016.n-1-05 Zobrazit plný text záznamu