An anode hole injection percolation model for oxide breakdown-the 'doom's day' scenario revisited

Autor:	B. E. Weir, A. Ghetti, Don Monroe, P.J. Silverman, S. Moccio, M.A. Alam, J. Bude, K.P. Cheung
Rok vydání:	2003
Předmět:	Generation process Trap (computing) chemistry.chemical_compound Reliability (semiconductor) Materials science Condensed matter physics chemistry Percolation Oxide Analytical chemistry Surface finish SILC Anode
Zdroj:	International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Popis:	A comprehensive percolation model is used to explore the role of non-uniform trap generation process on oxide breakdown. We show that this non-uniform trap generation (due to SILC and roughness induced localization) makes interpretation of experimental data difficult and can lead to incorrect projections for reliability of ultra-thin oxides.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b21d29570e61143b40fac153ba427998 https://doi.org/10.1109/iedm.1999.824251 Zobrazit plný text záznamu