The impact of NBTI and HCI on deep sub-micron PMOSFETs' lifetime

Autor:	Sam-Young Kim, Chae-Bog Rim, Hyun-Chul Kim, Chul-Hee Jeon
Rok vydání:	2003
Předmět:	Reliability (semiconductor) Materials science Negative-bias temperature instability CMOS business.industry MOSFET Gate dielectric Electrical engineering Dual gate business Engineering physics Threshold voltage Hot-carrier injection
Zdroj:	IEEE International Integrated Reliability Workshop Final Report, 2002..
Popis:	There have been new phenomena observed in advanced deep sub-micron CMOS technologies. Threshold voltage shift in deep submicron dual gate PMOSFETs due to negative bias temperature instability (NBTI) has become one of major issues among them in terms of reliability concern. In this work, NBTI and hot carrier injection (HCI) effects on the lifetime of 0.13 /spl mu/m technology with 1.3 nm-thick gate dielectric were investigated and we found NBTI can be a critical limitation of reliability in advanced deep sub-micron technologies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b20ef633036502e414830cf916a20e10 https://doi.org/10.1109/irws.2002.1194249 Zobrazit plný text záznamu