The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
| Autor: | A. Yu. Andreev, A. V. Lobintsov, A. A. Padalitsa, Maxim A. Ladugin, S. M. Sapozhnikov, K. Yu. Telegin, A. N. Aparnikov, I. V. Yarotskaya, N. A. Volkov, A. A. Marmalyuk |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Doping Physics::Optics Statistical and Nonlinear Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Algaas gaas law Optoelectronics Waveguide (acoustics) Electrical and Electronic Engineering business |
| Zdroj: | Quantum Electronics. 50:489-492 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qel17249 |
| Popis: | The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10 % – 15 %, all other conditions being equal. |
| Databáze: | OpenAIRE |
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