Synthesis and characterization of vertically aligned cadmium oxide nanowire array
| Autor: | Shweta Chaure |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Potential well Materials science Photoluminescence business.industry Band gap Scanning electron microscope Exciton Nanowire Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Cadmium oxide Aluminium oxide Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 28:1832-1836 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-016-5733-5 |
| Popis: | High density and ordered cadmium oxide (CdO) nanowire array has been synthesized using anodic aluminium oxide template by electrodeposition method. The optical, morphological and structural properties of nanowire array and planar thin layer have been studied with the help of UV–Vis spectrophotometer, photoluminescence spectrometer, scanning electron microscopy and X-ray diffraction. The results obtained from nanowire array are compared with the planar thin layer of CdO. Preferentially oriented along (200) plane with face centered cubic crystalline nanowires are synthesized. The uniform and vertically standing nanowire array of diameter ~50 nm and length ~2.5 μm was prepared. UV–Vis spectroscopy analysis confirms the direct gap of the CdO nanowires were found to be ~3.20 eV which is higher than the bulk CdO for direct band gaps (2.48 eV) due to quantum confinement effect. The CdO nanowire array has high transmittance over 80 % in visible region as compared to 55 % in case of CdO film. The direct band transition and exiton emission to nanowire array was observed at 440 and 510 nm, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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