Nickel Selective Etch for Contacts on Ge Based Devices

Autor:	Liesbeth Witters, Stefan De Gendt, Frank Holsteyns, Farid Sebaai, Paul Mertens, Yoshida Yukifumi
Rok vydání:	2014
Předmět:	Materials science Aqueous medium business.industry chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Nickel chemistry CMOS Optoelectronics General Materials Science Performance enhancement business Communication channel
Zdroj:	Solid State Phenomena. 219:105-108
ISSN:	1662-9779
Popis:	of high mobility channels materials like Ge. The introduction of Ge as channel material has already shown significant interests in term of device performance enhancement [1,2]. However, the use of Ge in CMOS integration has raised new challenges in terms of clean or wet etch steps since significant Ge loss occurs when it oxidizes in aqueous media.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b1ecf16ed6215c4272dbe245d8f937c9 https://doi.org/10.4028/www.scientific.net/ssp.219.105 Zobrazit plný text záznamu