Arsenic incorporation in InP epitaxial layers: a Raman scattering study
| Autor: | B. Jusserand, F. Mollot, D. Orani, L.G. Quagliano |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
inorganic chemicals
Materials science Reflection high-energy electron diffraction business.industry technology industry and agriculture Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake Semiconductor chemistry symbols Raman spectroscopy business Surface reconstruction Arsenic Raman scattering Molecular beam epitaxy |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 2:824-828 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/s1386-9477(98)00168-4 |
| Popis: | We use Raman spectroscopy to investigate the interaction of epitaxial InP surfaces with arsenic during gas-source molecular beam epitaxy. The analysis of the Raman data reveals an arsenic incorporation due to phosphorus replacement by arsenic in the InP surface. A strong temperature dependence of this incorporation process has been observed. The reversibility of As incorporation in the InP surface after a subsequent exposure to P has been also investigated and a temperature dependence of the disappearance of the InAs vibrations in the Raman spectra is demonstrated. This study demonstrates that Raman scattering is very sensitive to a thin layer at the surface and, when compared to other structural analyses such as RHEED, provides detailed information on the first stage of heteroepitaxy of semiconductors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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