Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices
| Autor: | Twinkle George, Arumugam Vadivel Murugan |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Nanoscale. 15:6960-6975 |
| ISSN: | 2040-3372 2040-3364 |
| Popis: | The effect of substitutional cation doping in the A-site of the nanoscale APbI3 perovskite layer has been systematically investigated to achieve improvements in the charge-carrier dynamics and endurance of non-volatile bipolar (NVB) memory devices. |
| Databáze: | OpenAIRE |
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