175V, > 5.4 MV/cm, $50\ \mathrm{m}\Omega.\text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction
| Autor: | David Eon, Julien Pernot, Nicolas Rouger, Juliette Letellier, Cédric Masante |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Fabrication Materials science 020208 electrical & electronic engineering Wide-bandgap semiconductor Analytical chemistry Diamond Order (ring theory) 02 engineering and technology engineering.material Thermal conduction 01 natural sciences Omega 0103 physical sciences MOSFET Boron doping 0202 electrical engineering electronic engineering information engineering engineering |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2019.8757645 |
| Popis: | A diamond MOSFET has been fabricated and characterized up to 250°C. The fabrication process has been improved in order to significantly reduce the specific on resistance, down to $50\ \mathbf{m}\mathbf{\Omega}.\mathbf{cm}^{2}$ , and the gate leakage current at high temperature. The maximum electrical field in diamond, at the breakdown value of 175V, is estimated to be higher than 5.4 MV/cm, with a boron doping of $2\times 10^{17}\ \mathbf{cm}^{-3}$ . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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