Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers

Autor:	D. V. Daineka, G. V. Benemanskaya, G. É. Frank-Kamenetskaya
Rok vydání:	1998
Předmět:	Adsorption Materials science Band gap Covalent bond Binding energy Monolayer General Physics and Astronomy Electronic structure Atomic physics Ionization energy Molecular physics Surface states
Zdroj:	Journal of Experimental and Theoretical Physics. 87:1167-1171
ISSN:	1090-6509 1063-7761
DOI:	10.1134/1.558608
Popis:	The electronic structure and ionization energy for the system Ba/Si(100)2×1 have been studied as functions of the submonolayer coverage. It is found that there is an energy gap in the surface states spectrum and that the Ba/Si(100)2×1 interface is semiconducting up to 1.5 monolayers of Ba. Two surface bands induced by Ba adsorption have been detected. The evolution of the spectrum with increasing degree of Ba coverage points to the existence of two nonequivalent “adsorption sites,” which differ in binding energy by 0.11 eV. The development of the Ba-induced bands is found to terminate at a coverage corresponding to the minimum ionization energy and close to one monolayer. The adsorption bond is shown to have a primarily covalent character.
Databáze:	OpenAIRE
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