Mechanism of Metallization-Induced Losses in the Rear-Side of Fully Screen-Printed p-type PERC Solar Cells
Autor: | Katsuhiko Shirasawa, Hidetaka Takato, Supawan Joonwichien, Satoshi Utsunomiya, Yasuhiro Kida, Masaaki Moriya |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Passivation Silicon 020209 energy Alloy chemistry.chemical_element 02 engineering and technology Cellular level engineering.material chemistry.chemical_compound Aluminium 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Common emitter business.industry technology industry and agriculture 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Silicon nitride engineering Optoelectronics 0210 nano-technology business Refractive index |
Zdroj: | IEEE Journal of Photovoltaics. 10:407-416 |
ISSN: | 2156-3403 2156-3381 |
Popis: | This article investigates metallization-induced recombination losses associated with the presence of silicon (Si) in the 1) rear passivation layers and 2) aluminum (Al) paste in fully screen-printed p -type passivated emitter and rear cell (PERC) solar cells. For 1), the rear sides of PERCs passivated with aluminum oxide films stacked with silicon nitride (SiN y ) films with various refractive indexes (n), as defined by the composition of the SiN y films, were fabricated. Si-rich SiN y films strongly degraded the implied open-circuit voltages of symmetrically passivated samples, that include cells. Elemental mapping analysis confirmed further metallization-induced losses at the cell level because of the formation of an Al-Si alloy within the passivation stacks, with the density of the alloy dependent on the refractive index. For 2), the rear sides of PERCs were metallized with Si-free Al paste or Al pastes that contain Si. High-Si paste had both good and bad effects: it produced thicker aluminum back surface fields but left partially-formed Al-Si alloy within the passivation films. |
Databáze: | OpenAIRE |
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