Emission of secondary particles from metals and insulators at impact of slow highly charged ions

Autor:	M. A. Briere, D. H. Schneider, A. V. Barnes, A.E. Schach von Wittenau, Thomas Schenkel, Alex V. Hamza
Rok vydání:	1997
Předmět:	Nuclear and High Energy Physics Chemistry Silicon dioxide Charge (physics) Electron Secondary electrons Ion chemistry.chemical_compound Physics::Plasma Physics Sputtering Secondary emission Coulomb Atomic physics Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 125:153-158
ISSN:	0168-583X
Popis:	The emission of secondary electrons and ions from clean Au, CxHyAu and SiO2 surfaces at impact of slow (v ≈ 0.3 vBohr) ions has been measured as a function of incident ion charge for 1 + ≤ q ≤ 75 +. Electron yields from thermal silicon dioxide films (150 nm on Si) are found to be lower than those from Au and CxHyAu for q > 3 +. Yields of negative secondary ions from SiO2 and CxHyAu were recorded in parallel with electron emission data and exhibit a qn, n ≈ 4, dependency on incident ion charge. A direct comparison of collisional and electronic contributions to secondary ion production from SiO2 films using a beam of charge state equilibrated Xeq=qeq (at 2.75 keV/u) shows positive and negative secondary ion yield increases with incident ion charge of > 400. Results are discussed in relation to key signatures of electronic sputtering by Coulomb explosions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b1cb6e5507f00483d6d3d3614c4defd2 https://doi.org/10.1016/s0168-583x(96)00930-5 Zobrazit plný text záznamu Full Text from ScienceDirect