The effects of radiation on the terrestrial operation of SiC MOSFETs
| Autor: | J.M. McGarrity, Richard Wilkins, Akin Akturk, Dave Grider, Brett Hull, Daniel J. Lichtenwalner, Neil Goldsman |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon 010308 nuclear & particles physics business.industry chemistry.chemical_element Radiation 01 natural sciences Condensed Matter::Materials Science chemistry.chemical_compound chemistry 0103 physical sciences Silicon carbide Optoelectronics Power semiconductor device Neutron Power MOSFET business Diode Voltage |
| Zdroj: | IRPS |
| DOI: | 10.1109/irps.2018.8353543 |
| Popis: | Terrestrial neutron induced reliability concerns are quantified for silicon carbide (SiC) power MOSFETs and silicon carbide power diodes using the terrestrial neutron simulator at Los Alamos Neutron Science Center. The experiments are used to determine failure in time (FIT) curves for these SiC power devices, and compare their curves with those of silicon power counterparts. The comparisons indicate significantly lower FIT rates for SiC devices at the rated voltage; however, the SiC FIT curves exhibit a tail extending into low biases resulting in nonzero albeit low FIT numbers. |
| Databáze: | OpenAIRE |
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