Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system

Autor:	Grzegorz Sęk, E. M. Pavelescu, W. Rudno-Rudziński, Johann Peter Reithmaier, C. Gilfert, Marcin Syperek, Jan Misiewicz, J. Andrzejewski
Rok vydání:	2012
Předmět:	Physics Photoluminescence Condensed matter physics Oscillator strength Quantum dot Radiative transfer Condensed Matter Physics Electronic band structure Coupling (probability) Eigenvalues and eigenvectors Quantum well Electronic Optical and Magnetic Materials
Zdroj:	Physical Review B. 85
ISSN:	1550-235X 1098-0121
DOI:	10.1103/physrevb.85.125311
Popis:	In this paper, we present time-resolved photoluminescence of self-assembled (In,Ga)As quantum dots (QDs) coupled to an In${}_{x}$Ga${}_{1\ensuremath{-}x}$As quantum well (QW) through a thin GaAs barrier. The coupling strength is controlled by the well width and material composition and has a direct influence on the QD--QW system ground-state radiative lifetime, which increases from 1.1 up to 1.82 ns as the coupling strength increases. A thorough explanation is given for the reduction of the fundamental transition oscillator strength in the interacting system induced by the transformation of related eigenstates from a noncoupled to a coupled regime. The experimental observations have been fully confirmed by the results of three-dimensional band structure calculations of a coupled QD--QW system within the framework of eight-band k$\ifmmode\cdot\else\textperiodcentered\fi{}$p theory.
Databáze:	OpenAIRE
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