Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors using Stacked Architecture
| Autor: | Yang Jian, Dong-Sheng Zhu, Yun Sun, Chao Zang, Dong-Ming Sun |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Gate dielectric Bend radius 02 engineering and technology Carbon nanotube Dielectric Photoresist 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Computer Science::Hardware Architecture Condensed Matter::Materials Science Hysteresis Resist law Thin-film transistor Optoelectronics 0210 nano-technology business |
| Zdroj: | 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| DOI: | 10.1109/edtm50988.2021.9420917 |
| Popis: | A small-hysteresis carbon nanotube thin-film transistors through the construction of stacked architecture has been proposed due to an interaction of the effects of surface and interface trapped charges. With the help of photoresist gate dielectric, the through-holes between the upper and lower devices can be easily patterned and formed with the self-assembly interconnections. The as-fabricated device can exhibit quite small hysteresis of 0.1 V at various bending radius indicating the good flexibility and stability. |
| Databáze: | OpenAIRE |
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