Modification of Ge-rich GeSbTe surface during the patterning process of phase-change memories
| Autor: | Sébastien Barnola, Yann Canvel, Christelle Boixaderas, Yann Mazel, Eugénie Martinez, Sébastien Lagrasta, K. Dabertrand |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Plasma etching Materials science Oxide chemistry.chemical_element 02 engineering and technology GeSbTe 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Stripping (fiber) Oxygen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Etching (microfabrication) Phase (matter) 0103 physical sciences Thermal stability Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Microelectronic Engineering. 221:111183 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2019.111183 |
| Popis: | An optimized Ge-rich GeSbTe (GST) ternary alloy is investigated to improve the thermal stability of future phase change memories (PCMs). The patterning process used for their manufacturing may change the GST surface chemical composition, thus damaging the devices performances. The impact of HBr plasma etching, O2 plasma stripping and HF cleaning is evaluated. Etching induces a Te enrichment at the surface. Stripping has the strongest influence creating a GST oxide at the surface, mainly composed of GeO2. This thin layer is removed by HF cleaning thus revealing the underlying Te-rich GST phase. Oxidation during long-term air exposure is also investigated. After etching (or cleaning), oxygen saturation is reached after 30 days of air exposure. The surface of GST just after stripping is also oxygen saturated, with no more evolution under air exposure. |
| Databáze: | OpenAIRE |
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