Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation

Autor:	Moon Sig Joo, Shajan Mathew, D.S.H. Chan, Wei Yip Loh, Byung Jin Cho, Dim-Lee Kwong, Ming-Fu Li
Rok vydání:	2004
Předmět:	Materials science Chemical physics Polarity (physics) Electrode MOSFET Analytical chemistry Charge (physics) Trapping Dielectric Metal gate High-κ dielectric
Zdroj:	IEEE International Electron Devices Meeting 2003.
Popis:	Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b1a4d5a2f8c4c6c7da0dbc6019793e42 https://doi.org/10.1109/iedm.2003.1269430 Zobrazit plný text záznamu