Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors

Autor:	David A. J. Moran, Stephen A. O. Russell, Helen McLelland, Oliver J. L. Fox, Paul W May
Rok vydání:	2011
Předmět:	Materials science Hydrogen Diamond-like carbon business.industry Transconductance chemistry.chemical_element Diamond Nanotechnology engineering.material Power (physics) chemistry Logic gate Hardware_INTEGRATEDCIRCUITS engineering Optoelectronics Field-effect transistor business Ohmic contact
Zdroj:	69th Device Research Conference.
DOI:	10.1109/drc.2011.5994454
Popis:	The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs) [1]. Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high frequency device technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b18f3e2a82ece8383c6c921dfbb37df4 https://doi.org/10.1109/drc.2011.5994454 Zobrazit plný text záznamu