Characterization of silicon pixel detectors with the n/sup +//n/p/sup +/ and double-sided multiguard ring structure before and after neutron irradiation
| Autor: | V. Eremin, Z. Li, G.W. Liang, X. Xie, C. Y. Chien, W. Huang, H.S. Cho, B. Dezillie |
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| Rok vydání: | 2000 |
| Předmět: |
Physics
Nuclear and High Energy Physics Large Hadron Collider Silicon Physics::Instrumentation and Detectors business.industry Detector chemistry.chemical_element Radiation Nuclear Energy and Engineering chemistry Optoelectronics Neutron Irradiation Electrical and Electronic Engineering business Radiation hardening Voltage |
| Zdroj: | IEEE Transactions on Nuclear Science. 47:772-776 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n/sup +//n/p/sup +/ and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6/spl times/10/sup 14/ n/cm/sup 2/, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately. |
| Databáze: | OpenAIRE |
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