Limitation of WSix/WN Diffusion Barrier for Tungsten Dual Polymetal Gate Memory Devices

Autor:	Kwan-Yong Lim, H.-S. Yang, Yong-Taik Kim, Seung-Woo Shin, W.-K. Ma, G.-H. Kim, Se-kyoung Choi, S.-R. Won, Kyeong-Keun Choi, Yong Soo Kim, Seung Ryong Lee, Whoi-Yul Kim, S.-A. Jang, J.-H. Han, H.-J. Cho, Y.-S. Chun, Y.-K. Jung, Tae-Un Youn, Se-Jun Kim, Yunbong Lee, Jin Kim, S.-Y. Koo, Min Gyu Sung, Seung-Ho Pyi, Kyungdo Kim, J.-K. Lee, T.-K. Oh, Y.-T. Hwang
Rok vydání:	2007
Předmět:	Materials science Diffusion barrier business.industry Polymetal Oxide chemistry.chemical_element Dielectric Tungsten chemistry.chemical_compound chemistry Gate oxide Electronic engineering Optoelectronics Diffusion (business) business AND gate
Zdroj:	2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Popis:	We compared WSix/WN and Ti/WN diffusion barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN diffusion barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of diffusion barrier. Relatively, Ti/WN diffusion barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b171a493bc75ceb6146dd16b7ec200c0 https://doi.org/10.1109/relphy.2007.369975 Zobrazit plný text záznamu