| Autor: |
M. Torkler, W. Finkelstein, W. H. Brünger, L.‐M. Buchmann |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3547 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.587468 |
| Popis: |
Ion projection lithography has been used to structure resist lines running over 0.5‐μm‐high surface steps on a wafer. Line profiles were straight and did not change at the surface step consisting of SiO2 on Si. 0.2‐μm resolution was found in 0.7‐μm‐thick positive and negative tone resist. In the list of tested resists [poly(methylmethacrylate) (PMMA), Ray PN, and AZ 5206], the novolack resist AZ 5206 showed better edge roughness compared to Ray PN due to the lower sensitivity of AZ. Exposure times range from 300 ms to 3 s. The recorded penetration depth in PMMA was 0.8 μm using H+ ions at 70 keV. A variation of ion energy gives the possibility to adjust the penetration depth to the required resist thickness and minimize radiation damage in the substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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