Selective Reactive ION Etching Effects on GaAs/AlGaAs Modfets

Autor:	S. Agarwala, M. Spencer, M. Tong, A. A. Ketterson, J. Griffin, D. G. Ballegeer, Ilesanmi Adesida
Rok vydání:	1991
Předmět:	Auger electron spectroscopy Materials science business.industry Transconductance Optoelectronics Schottky diode Field-effect transistor Heterojunction Plasma Reactive-ion etching business Threshold voltage
Zdroj:	MRS Proceedings. 240
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-240-335
Popis:	The effects of selective reactive ion etching (SRIE) in SiCl4/SiF4 plasmas on GaAs/AlxGai-xAs heterostructures have been studied. Auger electron spectroscopy (AES) and Schottky diode measurements were performed to determine the effects of SRIE and post-SRlE processing on the surface conditions of AlGaAs layers. The degradation of the two-dimensional electron gas (2-DEG) properties of GaAs/Al0.3Ga0.7As heterostructures due to low-energy ion bombardment during SRIE were investigated by conducting Hall measurements at 300 and 77 K. Finally, measurements were performed on dry etched GaAs/Al0.3Ga0.7As modulation-doped field effect transistors (MODFETs) to determine the effects of SRIE on transconductance and threshold voltage. It is shown that extensive overetching during gate recessing results in an increase in device threshold voltages.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b16cf7768570efe5e2f32aa71b15cdc1 https://doi.org/10.1557/proc-240-335 Zobrazit plný text záznamu Full text from SpringerLink