Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems
| Autor: | M. R. Melloch, David B. Janes, David D. Nolte, Jerry M. Woodall, J. C. P. Chang, Eric S. Harmon |
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| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
integumentary system business.industry General Chemical Engineering Analytical chemistry Mineralogy chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Crystallographic defect Electronic Optical and Magnetic Materials Arsenide chemistry.chemical_compound Semiconductor chemistry Electrical and Electronic Engineering Physical and Theoretical Chemistry Gallium business Quantum well Arsenic Molecular beam epitaxy |
| Zdroj: | Critical Reviews in Solid State and Materials Sciences. 21:189-263 |
| ISSN: | 1547-6561 1040-8436 |
| DOI: | 10.1080/10408439608241256 |
| Popis: | When arsenides are grown by molecular beam epitaxy at low substrate temperatures, as much as 2% excess arsenic can be incorporated into the epilayer. This excess arsenic is in the form of antisites, but there is also a substantial concentration of gallium vacancies. With anneal, there is a significant decrease in the arsenic antisite and gallium vancancy concentrations as the excess arsenic precipitates. With further anneal, the arsenic precipitates coarsen. This combination of low substrate temperature molecular beam epitaxy and a subsequent anneal results in a broad spectrum of materials, from highly defected epilayers to a two-phase system of semimetallic arsenic precipitates in an arsenide semiconductor matrix. These materials exhibit some very interesting and useful electrical and optical properties. |
| Databáze: | OpenAIRE |
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