High Performance Ge pMOSFET with Nitrided Gate Dielectrics and Microwave Annealing

Autor:	C.Y. Kao, S.H. Yi, C.W. Hsu, W.F. Chi, T.M. Li, K.S. Chang-Liao
Rok vydání:	2018
Předmět:	Materials science business.industry Microwave annealing Optoelectronics Dielectric business Nitriding
Zdroj:	Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2018.c-8-05
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b1513df0f74e989719d168641e438c88 https://doi.org/10.7567/ssdm.2018.c-8-05 Zobrazit plný text záznamu