Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II
| Autor: | U. K. Mishra, F. L. Hsueh, L. Faraone, J.G. Simmons |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
Materials science
Silicon Condensed matter physics business.industry Electrical engineering Oxide chemistry.chemical_element Condensed Matter Physics Junction area Electronic Optical and Magnetic Materials Metal Holding current chemistry.chemical_compound chemistry visual_art Materials Chemistry visual_art.visual_art_medium Electrical and Electronic Engineering Current (fluid) Constant (mathematics) business Voltage |
| Zdroj: | Solid-State Electronics. 25:335-344 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(82)90117-4 |
| Popis: | Effects of oxide isolation on the two-terminal D.C. characteristics of metal/tunnel-oxide/ n / p + silicon switching devices have been studied. Recent experimental results have shown that the switching characteristics are strongly dependent on area, and area-to-perimeter ratio of the device. To carry out a systematic investigation of this phenomenon, the devices in this study were isolated using V -grooves of various areas. For a given tunnel-oxide thickness and area, it was found that the magnitude of the switching voltage and holding current of the device increased with isolation area, whereas the switching current remained essentially constant. Furthermore, it is shown that the switching current is almost completely determined by the characteristics of the tunnel-oxide; in particular, the minority carrier concentration at the SiSiO 2 interface. Physical arguments are presented which adequately explain the observed trends. It is also experimentally shown that both switching current and holding current decrease as the tunnel-oxide thickness is increased. A simple two-dimensional model for the oxide-isolated MISS device is derived which effectively explains the above area-related phenomena. In agreement with experimental results, the model predicts that for a given tunnel-oxide thickness and area, an increase in switching voltage magnitude and holding current will result as the isolated p + - n junction area is increased. Calculations based on this model are shown to be in good agreement with experimental data. |
| Databáze: | OpenAIRE |
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