Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
| Autor: | Felix Fromm, Martin Hundhausen, Thomas Seyller, Michl Kaiser |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Graphene business.industry Mechanical Engineering Analytical chemistry Condensed Matter Physics Signal Refraction law.invention chemistry.chemical_compound symbols.namesake chemistry Mechanics of Materials law Silicon carbide symbols Optoelectronics General Materials Science business Raman spectroscopy Layer (electronics) Excitation Graphene nanoribbons |
| Zdroj: | Materials Science Forum. :1166-1169 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.778-780.1166 |
| Popis: | Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an approach to improve the Raman intensity of epitaxial graphene on SiC by recording Raman spectra in a top-down geometry, i.e. a geometry in which the graphene layer is probed with the excitation through the SiC substrate [1]. This technique takes advantage of the fact, that most of the Raman scattered light of the graphene is emitted into the SiC substrate. We analyze in detail the top-down measurement geometry regarding the graphene and SiC Raman intensity, as well as the influence of aberration effects caused by the refraction at the air/SiC interface. |
| Databáze: | OpenAIRE |
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