Electrical Performance of GaN Schottky Rectifiers on Si Substrates
| Autor: | Lars F. Voss, H. Lahreche, J. Thuret, Fan Ren, Philippe Bove, Stephen J. Pearton |
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| Rok vydání: | 2006 |
| Předmět: |
Range (particle radiation)
Materials science Renewable Energy Sustainability and the Environment business.industry Schottky diode Reverse current Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Materials Chemistry Electrochemistry Sapphire Optoelectronics Electrical performance business Voltage |
| Zdroj: | Journal of The Electrochemical Society. 153:G681 |
| ISSN: | 0013-4651 |
| Popis: | Schottky rectifiers fabricated on GaN layers grown on 4 in. diam Si substrates show breakdown voltages (V R ) of ∼ 300 V at room temperature, on-state resistances (R ON ) of 40 mΩ cm 2 , and figure-of-merit (V B ) 2 /R ON of 2.25 MW/cm 2 . The reverse current is thermally activated with activation energies in the range 0.3-0.4 eV and is proportional to contact perimeter at reverse biases up to ∼100 V. This approach provides a low-cost alternative to GaN rectifiers on sapphire or SiC substrates while still maintaining good breakdown characteristics. |
| Databáze: | OpenAIRE |
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