Autoemission properties of nanoscale structures
Jazyk: | ruština |
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Rok vydání: | 2019 |
Předmět: | |
DOI: | 10.18720/spbpu/3/2019/vr/vr19-1840 |
Popis: | Рданной ÑабоÑе ÑаÑÑмоÑÑÐµÐ½Ñ Ð°Ð²ÑоÑмиÑÑионнÑе Ñ Ð°ÑакÑеÑиÑÑики ÑазлиÑнÑÑ ÑонкопленоÑнÑÑ ÑÑÑÑкÑÑÑ Ð½Ð° кÑемниевÑÑ Ð¿Ð¾Ð´Ð»Ð¾Ð¶ÐºÐ°Ñ ÑазлиÑнÑÑ Ñипов. СÑÑÑкÑÑÑÑ ÑоздавалиÑÑ Ð¸Ð· ÑÐ°ÐºÐ¸Ñ Ð¼ÐµÑаллов, как Mo, Zr, W, Ni, Ti. ÐÑи ÑазнÑÑ ÑкоÑоÑÑÑÑ Ð½Ð°Ð¿ÑÐ»ÐµÐ½Ð¸Ñ Ð¸ ÑемпеÑаÑÑÑе подложки. ÐÑоанализиÑÐ¾Ð²Ð°Ð½Ñ ÑмиÑÑионнÑе Ñ Ð°ÑакÑеÑиÑÑики, завиÑимоÑÑи Ñока Ð¾Ñ Ð²Ñемени, вÑÑвлена опÑималÑÐ½Ð°Ñ ÑопогÑаÑÐ¸Ñ Ð¿Ð¾Ð²ÐµÑÑ Ð½Ð¾ÑÑи. In this paper, the field emission characteristics of various thin-film structures on silicon substrates of various types were considered. The structures were created from metals such as Mo, Zr, W, Ni, Ti. At different deposition rates and substrate temperatures. The emission characteristics was analyzed, the optimal surface topography was revealed. |
Databáze: | OpenAIRE |
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