Higher-k Tetragonal Phase Stabilization in Atomic Layer Deposited Hf1-xZrxO2 (0
Autor:
Alain C. Diebold, Gert J. Leusink, Sonal Dey, Robert D. Clark, Steven Consiglio, Kandabara Tapily, Kai-Hung Yu, Cory Wajda, Arthur R. Woll
Rok vydání:
2016
Předmět:
010302 applied physics
Materials science
Annealing (metallurgy)
Mechanical Engineering
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
Condensed Matter Physics
Epitaxy
01 natural sciences
Amorphous solid
Crystallography
Atomic layer deposition
Tetragonal crystal system
Mechanics of Materials
0103 physical sciences
General Materials Science
Thin film
0210 nano-technology
Monoclinic crystal system
Zdroj:
MRS Advances. 1:269-274
ISSN:
2059-8521
DOI:
10.1557/adv.2016.65
Popis:
For exploring the prospect of higher-k dielectric phase engineering on a high mobility substrate, films of Hf1-xZrxO2 with varying x-values (0 ≤ x ≤ 1) were deposited on Al2O3 passivated Ge substrates using atomic layer deposition (ALD) with a cyclic deposit-anneal-deposit-anneal (DADA) scheme. The evolution of monoclinic to higher-k tetragonal structure with increasing ZrO2 concentration was probed by grazing incident x-ray diffraction and partial reciprocal space maps using the highly brilliant synchrotron x-ray source at the Cornell High Energy Synchrotron Source (CHESS). A primarily amorphous/nano-crystalline matrix of the as-deposited films changed to randomly aligned grains of nanocry stalline MO2 (M=Hf, Zr) after post deposition annealing at 800 °C for 200 seconds. In contrast, the DADA films annealed for same thermal budget showed high degree of preferred orientation along certain crystallographic directions. With increasing ZrO2 content, the structure of the films changed from a monoclinic to a tetragonal phase. A lower amount of ZrO2 (x = 0.33) was required for stabilizing the tetragonal phase in films grown on Al2O3 passivated Ge substrate as compared to similar films grown on a Si substrate via the same DADA process (x ≥ 0.50).
Databáze:
OpenAIRE
Externí odkaz:
| Autor: | Alain C. Diebold, Gert J. Leusink, Sonal Dey, Robert D. Clark, Steven Consiglio, Kandabara Tapily, Kai-Hung Yu, Cory Wajda, Arthur R. Woll |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Mechanical Engineering 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Amorphous solid Crystallography Atomic layer deposition Tetragonal crystal system Mechanics of Materials 0103 physical sciences General Materials Science Thin film 0210 nano-technology Monoclinic crystal system |
| Zdroj: | MRS Advances. 1:269-274 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2016.65 |
| Popis: | For exploring the prospect of higher-k dielectric phase engineering on a high mobility substrate, films of Hf1-xZrxO2 with varying x-values (0 ≤ x ≤ 1) were deposited on Al2O3 passivated Ge substrates using atomic layer deposition (ALD) with a cyclic deposit-anneal-deposit-anneal (DADA) scheme. The evolution of monoclinic to higher-k tetragonal structure with increasing ZrO2 concentration was probed by grazing incident x-ray diffraction and partial reciprocal space maps using the highly brilliant synchrotron x-ray source at the Cornell High Energy Synchrotron Source (CHESS). A primarily amorphous/nano-crystalline matrix of the as-deposited films changed to randomly aligned grains of nanocry stalline MO2 (M=Hf, Zr) after post deposition annealing at 800 °C for 200 seconds. In contrast, the DADA films annealed for same thermal budget showed high degree of preferred orientation along certain crystallographic directions. With increasing ZrO2 content, the structure of the films changed from a monoclinic to a tetragonal phase. A lower amount of ZrO2 (x = 0.33) was required for stabilizing the tetragonal phase in films grown on Al2O3 passivated Ge substrate as compared to similar films grown on a Si substrate via the same DADA process (x ≥ 0.50). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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