| Popis: |
High resolution channeling, combined with TEM, has been used to investigate ion implant damage, atom location and phase changes in high dose Dy + , Ar + and Sb + implanted (100) Fe. Results indicate that amorphous damage produced by Dy + implantation can be annealed out by 600°C with substantial Dy precipitation and a fraction of Dy atoms residing on substitutional lattice sites. Subsequent reimplantation with Ar + does not reamorphize the Fe(Dy) surface layer. For Sb + implantation to doses ≲10 16 cm −2 , a high concentration (up to a few atomic percent) of Sb atoms were measured to reside on Fe lattice sites. A gradual build up of damage was observed (as measured by an increased channeling minimum yield) with increasing Sb + ion dose. At Sb + doses approaching 10 17 cm −2 microcrystallites of an, as yet, unidentified phase were observed within the near-surface. No clearly observed crystalline-to-amorphous transition was obtained for 120 keV Sb + implantation to a saturation concentration of 12 at .%. |
