Electrospun ZnSnO Nanofibers for Neuromorphic Transistors With Ultralow Energy Consumption
| Autor: | Guoxia Liu, Yixin Zhu, Fukai Shan, Byoung-Chul Shin |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Transistor Oxide Nanotechnology Biasing Electrolyte equipment and supplies 01 natural sciences Electrospinning Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Neuromorphic engineering chemistry law Logic gate Nanofiber 0103 physical sciences Electrical and Electronic Engineering |
| Zdroj: | IEEE Electron Device Letters. 40:1776-1779 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2019.2942342 |
| Popis: | Emulating the essential synaptic working principles using a three-terminal synaptic transistor has been an important research field in recent years. Electrospun metal oxide nanofibers have been regarded as promising blocks for large-area, low-cost, and one-dimensional (1D) electronic devices. In this letter, zinc-tin oxide (ZnSnO) nanofibers were fabricated by electrospinning, and the synaptic transistors based on ZnSnO nanofibers were integrated. To mimic the synaptic behavior of human brain, LiClO4 dissolved in polyethylene oxide was used as the gate electrolyte in the synaptic transistors. The plasticities, including short term and long term, are mimicked with the help of electrolyte ion dynamics under low and large bias voltage, and an energy consumption of as low as 0.44 pJ per event is observed. This work demonstrates a new approach for establishing the large-scale, energy-efficient 1D artificial synapses for neuromorphic networks. |
| Databáze: | OpenAIRE |
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