Fabrication and Characterization of 65nm Gate Length p-MOSFET Integrated with Bottom up Grown Si Nanowire
Autor: | Weifeng Yang, Sung Jin Whang, Sung Joo Lee, Hai Chen Zhu, Byung Jin Cho |
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Rok vydání: | 2007 |
Zdroj: | ECS Meeting Abstracts. :1191-1191 |
ISSN: | 2151-2043 |
DOI: | 10.1149/ma2007-01/33/1191 |
Popis: | not Available. |
Databáze: | OpenAIRE |
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