Fabrication and Characterization of 65nm Gate Length p-MOSFET Integrated with Bottom up Grown Si Nanowire

Autor: Weifeng Yang, Sung Jin Whang, Sung Joo Lee, Hai Chen Zhu, Byung Jin Cho
Rok vydání: 2007
Zdroj: ECS Meeting Abstracts. :1191-1191
ISSN: 2151-2043
DOI: 10.1149/ma2007-01/33/1191
Popis: not Available.
Databáze: OpenAIRE