| Autor: |
Jae-Jong Han, Yong-woo Hyung, Ho-Min Son, Won-Jun Chang, Hyeong-Ki Kim, Junghyun Park, Hyeon-deok Lee, Woong Lee, Wook-Hyun Kwon, Jung-Geun Jee |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual. |
| DOI: |
10.1109/relphy.2007.369890 |
| Popis: |
The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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