Scanning electron microscopy of defects in dielectric films
| Autor: | S. V. Nosikov, F. P. Press, V. V. Pastushkov, V. G. Galstyan |
|---|---|
| Rok vydání: | 1972 |
| Předmět: |
Materials science
business.industry Scanning electron microscope Electron beam-induced current Oxide Analytical chemistry Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Secondary emission Optoelectronics Electron beam-induced deposition Thin film Silicon oxide business |
| Zdroj: | Physica Status Solidi (a). 12:381-387 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.2210120205 |
| Popis: | A technique of the local analysis of defects in silicon oxide thin films and the expansion of the defects in semiconducting crystalline substrates is given. The technique is based on the use of a scanning electron microscope (electron beam induced current and secondary electron emission modes of operation). It is shown that local junctions are formed at temperatures in the interval 450 to 560 °C as a result of interaction of Al and SiO2 defects. It is suggested that the degradation of electrical properties of planar structures is due to the high density of defects arising near steps formed at the boundary between the original oxide film and the thin oxide layer thermally re-grown in the photolithographic openings. [Russian Text Ignored] |
| Databáze: | OpenAIRE |
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