Infrared Semiconductor Laser Annealing Used for Activation of Silicon Implanted with Boron and Phosphorus Atoms

Autor:	Toshiyuki Sameshima, N. Hamamoto, K. Ukawa, Masao Naito, Naoki Sano
Rok vydání:	2009
Předmět:	Laser annealing Semiconductor Materials science chemistry Silicon business.industry Infrared Phosphorus chemistry.chemical_element Optoelectronics Boron business
Zdroj:	Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2009.p-1-18
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b0ffc1a36decab135fee801292f5bd23 https://doi.org/10.7567/ssdm.2009.p-1-18 Zobrazit plný text záznamu