Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
| Autor: | Shen Zhanwei, Junxiu Chen, Wen Zhengxin, Xingguo Li, Z.G. Wang, Yan Guoguo, Guo Sheng Sun, Y.P. Zeng, Xiyan Zhang, L. Wang, Xiehe Liu, Fuwang Zhang, Wanshun Zhao |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Inorganic Chemistry Reduction (complexity) Etching (microfabrication) 0103 physical sciences Materials Chemistry Optoelectronics Power semiconductor device Growth rate 0210 nano-technology business |
| Zdroj: | Journal of Crystal Growth. 505:1-4 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2018.09.023 |
| Popis: | In this paper, thick 4H-SiC epilayers of 147 μm demanded for ultra-high-voltage power devices has been obtained at a high growth rate of 85 µm/h under optimized growth conditions. We have attempted to improve the quality and reduce the surface defect density of thick epilayers. The surface defect density is obviously reduced from 3.46 cm−2 to 0.85 cm−2, owing to the addition of the etching process. The effect of the etching process on the surface defect is discussed based on the measured results. The results demonstrate that the fast epitaxial growth system can grow ultra thick 4H-SiC epilayers with high quality that satisfies the requirement of ultra-high-voltage devices. |
| Databáze: | OpenAIRE |
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