Electron wave diffraction by semiconductor gratings: Rigorous analysis and design parameters
Autor: | Elias N. Glytsis, Thomas K. Gaylord, Gregory N. Henderson |
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Rok vydání: | 1991 |
Předmět: | |
Zdroj: | Applied Physics Letters. 59:440-442 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.105456 |
Popis: | An exact rigorous coupled‐wave analysis has been developed to model ballistic electron wave diffraction by gratings with periodic effective mass and/or potential energy variations. Design expressions have been derived to calculate diffracted angles, to identify evanescent orders, and to identify the Bragg condition. Design expressions for Bragg regime (up to 100% diffraction efficiency in a single order) and Raman–Nath regime (high diffraction efficiency divided among multiple orders) diffraction are presented along with example Ga1−xAlxAs grating designs. Design procedures for ballistic electron switches, multiplexers, spectrometers, and electron waveguide couplers are described. |
Databáze: | OpenAIRE |
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