| Autor: |
Jinnig Liu, B.N. Guo, JieJie Xu, Terry Romig, Kyu-Ha Shim, Peter D. Nunan, Elshot Kim, Yuri Erokhin |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.2401570 |
| Popis: |
As CMOS devices shrink they become increasingly sensitive to variations of ion beam angular properties and beam current density. In sub‐65 nm devices beam divergence and beam steering variations at levels commonly seen in high current implanters for Source/Drain Extension (SDE) implants could significantly shift device characteristics compromising yield and robustness of manufacturing process. In this paper we review the implant precision requirements for Source/Drain Extension (SDE) formation for sub‐65nm node devices. TCAD simulation was used to analyze the effects of beam divergence and steering errors for an on‐axis (0°) SDE implant on sub‐65 nm NMOS HP devices. Effects of energy contamination introduced along with decelerated low energy ions in p‐type SDE implants in PMOS devices is also discussed. Response of device electrical characteristics to variation of beam angle properties is quantified and beam angle control requirements for state‐of‐the‐art ultra‐low energy implanters formulated. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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