Atomic-scale desorption of H atoms from theSi(100)−2×1:Hsurface: Inelastic electron interactions
| Autor: | Marilena Carbone, Laetitia Soukiassian, Andrew J. Mayne, Gérald Dujardin |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | Physical Review B. 68 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | The atomic-scale desorption of hydrogen atoms from the $\mathrm{Si}(100)\ensuremath{-}2\ifmmode\times\else\texttimes\fi{}1:\mathrm{H}$ surface with the tip of the scanning tunneling microscope has been studied using two different desorption methods, namely the stationary and scanning modes. Both p-type and n-type silicon samples have been investigated and a statistical large data set has been acquired. At low sample voltage (+2.5 V), the desorption yield has been found to follow a power law of the tunnel current ${I}^{\ensuremath{\alpha}},$ with \ensuremath{\alpha} being much smaller (\ensuremath{\approx}1) than in previous reports (\ensuremath{\approx}10--15). This means that highly dissipative inelastic electronic channels with very few electrons involved (\ensuremath{\approx}2) are more favorable than previously proposed schemes involving many (\ensuremath{\approx}11--16) weakly dissipative electrons. |
| Databáze: | OpenAIRE |
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