Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer
Autor: | Dongdong Li, Yinyue Lin, Xingyu Gao, Yuanwei Jiang, Gang Li, Feng Qiang, Xi Zhou, Jilei Wang, Linfeng Lu, Liyou Yang, Guanlin Du, Le Li, Wei Zhang |
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Rok vydání: | 2021 |
Předmět: |
Materials science
Silicon Passivation Energy conversion efficiency Oxide chemistry.chemical_element 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Chemical engineering General Materials Science Work function Crystalline silicon 0210 nano-technology Layer (electronics) |
Zdroj: | ACS Applied Materials & Interfaces. 13:28415-28423 |
ISSN: | 1944-8252 1944-8244 |
DOI: | 10.1021/acsami.1c08258 |
Popis: | Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu2O) hole-selective contacts are demonstrated. The direct p-Si/Cu2O contact leads to a substoichiometric SiOx interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al2O3 layer is subsequently employed at the p-Si/Cu2O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu2O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al2O3/Cu2O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells. |
Databáze: | OpenAIRE |
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